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| IRFP3415 hexfet ? power mosfet s d g parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 43 i d @ t c = 100c continuous drain current, v gs @ 10v 30 a i dm pulsed drain current p d @t c = 25c power dissipation 200 w linear derating factor 1.3 w/ v gs gate-to-source voltage 20 v e as single pulse avalanche energy 590 mj i ar avalanche current 22 a e ar repetitive avalanche energy 20 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbfin (1.1nm) absolute maximum ratings parameter typ. max. units r jc junction-to-case ??? 0.75 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient ??? 40 thermal resistance v dss = 150v r ds(on) = 0.042 ? i d = 43a advanced process technology dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated description fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-247 package is preferred for commercial- industrial applications where higher power levels preclude the use of to-220 devices. the to-247 is similar but superior to the earlier to-218 package because of its isolated mounting hole. www.irf.com 1 to-247ac
IRFP3415 2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 22a, v gs = 0v t rr reverse recovery time ??? 260 390 ns t j = 25c, i f = 22a q rr reverse recovery charge ??? 2.2 3.3 c di/dt = 100a/s source-drain ratings and characteristics s d g parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 150 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.17 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.042 ? v gs = 10v, i d = 22a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 19 ??? ??? s v ds = 50v, i d = 22a ??? ??? 25 a v ds = 150v, v gs = 0v ??? ??? 250 v ds = 120v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 200 i d = 22a q gs gate-to-source charge ??? ??? 17 nc v ds = 120v q gd gate-to-drain ("miller") charge ??? ??? 98 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 12 ??? v dd = 75v t r rise time ??? 55 ??? i d = 22a t d(off) turn-off delay time ??? 71 ??? r g = 2.5 ? t f fall time ??? 69 ??? r d = 3.3 ?, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 2400 ??? v gs = 0v c oss output capacitance ??? 640 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 340 ??? ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance s d g 4.5 repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 22a, di/dt 820a/s, v dd v (br)dss , t j 175c notes: v dd = 25v, starting t j = 25c, l = 2.4mh r g = 25 ? ! i as = 22a. (see figure 12) pulse width 300 " s; duty cycle 2%. # 150 $ IRFP3415 www.irf.com 3 10 100 1000 1 10 100 20us pulse width t = 25 c j o top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.5v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 1 10 100 20us pulse width t = 175 c j o top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.5v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) o v = i = gs d 10v 37a 10 100 1000 4 5 6 7 8 9 10 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j IRFP3415 4 www.irf.com ! ! " " " #$ 1 10 100 0 1000 2000 3000 4000 5000 6000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 22a v = 30v ds v = 75v ds v = 120v ds 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j o t = 175 c j o 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c o o v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms IRFP3415 www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms % 1 0.1 % & % & '( % + - % fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) IRFP3415 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - %& fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 200 400 600 800 1000 1200 1400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as o i d top bottom 9.0a 16a 22a IRFP3415 www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer ' IRFP3415 8 www.irf.com to - 247 package outline lead assignments notes: - d - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m ca s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) 3.65 (.143) 3.55 (.140) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 12 3 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-247-ac. 1 - gate 2 - drain 3 - source 4 - drain dimensions are shown in millimeters (inches) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/03 data and specifications subject to change without notice. note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
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